Analyses of Chemical States at SiN<sub>x</sub>/GaN Interface by HAXPES

Y. Saito; T. Yonemura; J. Iihara; S. Uemura; Y. Tateno; T. Kouchi; T. Araya; S. Kurachi; T. Komatani; J. Wada

doi:https://doi.org/10.7567/SSDM.2013.PS-6-12

[PS-6-12] Analyses of Chemical States at SiN_x/GaN Interface by HAXPES

Y. Saito¹, T. Yonemura¹, J. Iihara¹, S. Uemura¹, Y. Tateno¹, T. Kouchi¹, T. Araya², S. Kurachi², T. Komatani², J. Wada² (1.Sumitomo Electric Industries, Ltd., 2.Sumitomo Electric Device Innovations, Inc. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-6-12

2013 International Conference on Solid State Devices and Materials

[PS-6-12] Analyses of Chemical States at SiNx/GaN Interface by HAXPES

[PS-6-12] Analyses of Chemical States at SiN_x/GaN Interface by HAXPES