Analyses of Chemical States at SiN<sub>x</sub>/GaN Interface by HAXPES

Y. Saito; T. Yonemura; J. Iihara; S. Uemura; Y. Tateno; T. Kouchi; T. Araya; S. Kurachi; T. Komatani; J. Wada

doi:https://doi.org/10.7567/SSDM.2013.PS-6-12

[PS-6-12] Analyses of Chemical States at SiN_x/GaN Interface by HAXPES

Y. Saito¹、T. Yonemura¹、J. Iihara¹、S. Uemura¹、Y. Tateno¹、T. Kouchi¹、T. Araya²、S. Kurachi²、T. Komatani²、J. Wada² (1.Sumitomo Electric Industries, Ltd.、2.Sumitomo Electric Device Innovations, Inc. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-6-12

2013 International Conference on Solid State Devices and Materials

[PS-6-12] Analyses of Chemical States at SiNx/GaN Interface by HAXPES

[PS-6-12] Analyses of Chemical States at SiN_x/GaN Interface by HAXPES