[PS-6-14] Performance scalability studies by TCAD simulation of raised source/drain versus implanted source/drain plasma-PH₃ passivated In_0.53Ga_0.47As MOSFET

A.B.S. Sumarlina^1,2、G. Samudra¹ (1.National Univ. of Singapore、2.GLOBALFOUNDRIES (Singapore))

https://doi.org/10.7567/SSDM.2013.PS-6-14