[PS-6-28L] Normally-off AlGaN/GaN MIS-HFET using stacked NiO/Al₂O₃ Gate Structure Formed by Atomic Layer Deposition

Y. Yamada¹, A. Suzuki¹, N. Otsuka¹, D. Ueda¹ (1.Panasonic Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-6-28L