[PS-6-31L] Improved Breakdown Properties in Short Gate InP-based HEMTs with Novel Tri-Layer Channel Structure

A. El Moutaouakil¹、H. Sugiyama¹、H. Matsuzaki¹ (1.NTT Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-6-31L