[PS-6-32L] Crystal growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and fabrication of InAs HFETs using Ni/Au alloy ohmic metal

K. Moriguchi¹、T. Maemoto¹、K. Ogata¹、S. Sasa¹ (1.Osaka Institute of Technology (Japan))

https://doi.org/10.7567/SSDM.2013.PS-6-32L