[PS-6-5] Suppress Current Collapse Effect by Optimizing 0.12um Gate Structure of AlGaN/GaN HEMTs on Si-substrate for Microwave Power Applications

D. Kim¹、S. Eom¹、S. Han¹、H. Cha²、K. Seo¹ (1.Seoul National Univ.、2.Hongik Univ. (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-5