[PS-6-5] Suppress Current Collapse Effect by Optimizing 0.12um Gate Structure of AlGaN/GaN HEMTs on Si-substrate for Microwave Power Applications
D. Kim1, S. Eom1, S. Han1, H. Cha2, K. Seo1
(1.Seoul National Univ., 2.Hongik Univ. (Korea))
https://doi.org/10.7567/SSDM.2013.PS-6-5
