[PS-6-6] Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ Si_xN_y on AlGaN

H.Y. Ko¹、J. Park¹、H. Lee¹、Y. Jo¹、M. Song¹、T. Jang¹ (1.LG Electronics (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-6