[PS-6-6] Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ Si_xN_y on AlGaN

H.Y. Ko¹, J. Park¹, H. Lee¹, Y. Jo¹, M. Song¹, T. Jang¹ (1.LG Electronics (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-6