[PS-6-7] Improvement of Hysteresis Behavior in AlGaN/GaN MIS-HEMTs with SiN_x Using NH₃

H. Ryu¹、W. Choi¹、N. Jeon¹、H.Y. Cha²、K.S. Seo¹ (1.Seoul National Univ.、2.Hongik Univ. (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-7