[PS-6-7] Improvement of Hysteresis Behavior in AlGaN/GaN MIS-HEMTs with SiN_x Using NH₃

H. Ryu¹, W. Choi¹, N. Jeon¹, H.Y. Cha², K.S. Seo¹ (1.Seoul National Univ., 2.Hongik Univ. (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-7