[PS-6-8] Effect of SF₆ Plasma Treatment on Gate Leakage and Subthreshold Characteristics of AlGaN/GaN HEMTs

N. Lee¹、N. Jeon¹、D. Kim¹、M. Kim¹、S. Choi¹、K.S. Seo¹ (1.Seoul National Univ. (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-8