[PS-6-8] Effect of SF₆ Plasma Treatment on Gate Leakage and Subthreshold Characteristics of AlGaN/GaN HEMTs

N. Lee¹, N. Jeon¹, D. Kim¹, M. Kim¹, S. Choi¹, K.S. Seo¹ (1.Seoul National Univ. (Korea))

https://doi.org/10.7567/SSDM.2013.PS-6-8