On-wafer Nonlinear Behavior Modeling Technology for High Power GaN HEMTs Using Load-dependent X-parameters

C.S. Chiu; C.W. Chuang; B.Y. Chen; W.D. Liu; G.W. Huang; Y.C. Lin; Y.S. Chiu; E.Y. Chang

doi:https://doi.org/10.7567/SSDM.2013.PS-6-9

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[PS-6-9] On-wafer Nonlinear Behavior Modeling Technology for High Power GaN HEMTs Using Load-dependent X-parameters

C.S. Chiu¹、C.W. Chuang¹、B.Y. Chen¹、W.D. Liu¹、G.W. Huang^1,2、Y.C. Lin²、Y.S. Chiu²、E.Y. Chang² (1.National Nano Device Labs.、2.National Chiao Tung Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-6-9

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