Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer

H. Guo; H.J. Chen; X. Zhang; P.Y. Zhang; H.G. Liu; B. Sun; Q.H. Liao; S.J. Hu; S.K. Wang; Y.P. Cui

doi:https://doi.org/10.7567/SSDM.2013.PS-7-2

[PS-7-2] Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer

H. Guo^1,2、H.J. Chen²、X. Zhang²、P.Y. Zhang²、H.G. Liu¹、B. Sun¹、Q.H. Liao³、S.J. Hu³、S.K. Wang¹、Y.P. Cui² (1.Inst.of Microelectronics、2.Univ. of Southeast、3.Univ. of Nanchang (China))

https://doi.org/10.7567/SSDM.2013.PS-7-2

2013 International Conference on Solid State Devices and Materials

[PS-7-2] Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer