[PS-8-15] Preferential N-H Bond Direction in GaAsN(001) Grown by Chemical Beam Epitaxy

K. Ikeda¹、K. Demizu¹、N. Kojima¹、Y. Ohshita¹、M. Yamaguchi¹ (1.Toyota Technological Inst. (Japan))

https://doi.org/10.7567/SSDM.2013.PS-8-15