Crystal Characteristic of GaN/ZnO Heterostructure Grown by Molecular Beam Epitaxye

C.Y. Chang; Y.P. Lan; H.M. Huang; T.C. Lu; L.W. Tu; W.F. Hsieh; H.C. Kuo; S.C. Wang

doi:https://doi.org/10.7567/SSDM.2013.PS-8-22L

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[PS-8-22L] Crystal Characteristic of GaN/ZnO Heterostructure Grown by Molecular Beam Epitaxye

C.Y. Chang¹、Y.P. Lan¹、H.M. Huang¹、T.C. Lu¹、L.W. Tu²、W.F. Hsieh¹、H.C. Kuo¹、S.C. Wang¹ (1.National Chiao Tung Univ.、2.National Sun Yat-Sen Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-8-22L

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