[PS-9-11] Uniformity Improvement of Resistance State by Using Novel Electrical Operation for the Flexible AlN Unipolar Resistive RAM (RRAM)

C.L. Lin¹、C.M. Wu¹、Y.H. Yang¹、C.H. Soh¹、W.Y. Chang¹、Y.L. Huang¹、P.C. Juan² (1.Feng Chia Univ.、2.Mingchi Univ. of Tech. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-9-11