[PS-9-11] Uniformity Improvement of Resistance State by Using Novel Electrical Operation for the Flexible AlN Unipolar Resistive RAM (RRAM)

C.L. Lin¹, C.M. Wu¹, Y.H. Yang¹, C.H. Soh¹, W.Y. Chang¹, Y.L. Huang¹, P.C. Juan² (1.Feng Chia Univ., 2.Mingchi Univ. of Tech. (Taiwan))

https://doi.org/10.7567/SSDM.2013.PS-9-11