Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

F. Huang; D. Han; D. Shan; S. Zhang; Y. Tian; Y. Cong; J. Cai; L. Wang; X. Zhang; Y. Wang

doi:https://doi.org/10.7567/SSDM.2013.PS-9-16

[PS-9-16] Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

F. Huang^1,2, D. Han¹, D. Shan^1,2, S. Zhang^1,2, Y. Tian¹, Y. Cong¹, J. Cai^1,2, L. Wang^1,2, X. Zhang¹, Y. Wang¹ (1.Peking Univ., 2.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2013.PS-9-16

2013 International Conference on Solid State Devices and Materials

[PS-9-16] Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature