The Japan Society of Applied Physics

[PS-9-16] Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature

F. Huang1,2、D. Han1、D. Shan1,2、S. Zhang1,2、Y. Tian1、Y. Cong1、J. Cai1,2、L. Wang1,2、X. Zhang1、Y. Wang1 (1.Peking Univ.、2.Peking Univ. (China))

https://doi.org/10.7567/SSDM.2013.PS-9-16