[PS-6-5] Suppress Current Collapse Effect by Optimizing 0.12um Gate Structure of AlGaN/GaN HEMTs on Si-substrate for Microwave Power Applications

D. Kim¹、S. Eom¹、S. Han¹、H. Cha²、K. Seo¹ (1.Seoul National Univ.、2.Hongik Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-6] Improvement of process uniformity in recessed gate AlGaN/GaN HFET by selective etching of in-situ Si_xN_y on AlGaN

H.Y. Ko¹、J. Park¹、H. Lee¹、Y. Jo¹、M. Song¹、T. Jang¹ (1.LG Electronics (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-7] Improvement of Hysteresis Behavior in AlGaN/GaN MIS-HEMTs with SiN_x Using NH₃

H. Ryu¹、W. Choi¹、N. Jeon¹、H.Y. Cha²、K.S. Seo¹ (1.Seoul National Univ.、2.Hongik Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-8] Effect of SF₆ Plasma Treatment on Gate Leakage and Subthreshold Characteristics of AlGaN/GaN HEMTs

N. Lee¹、N. Jeon¹、D. Kim¹、M. Kim¹、S. Choi¹、K.S. Seo¹ (1.Seoul National Univ. (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-9] On-wafer Nonlinear Behavior Modeling Technology for High Power GaN HEMTs Using Load-dependent X-parameters

C.S. Chiu¹、C.W. Chuang¹、B.Y. Chen¹、W.D. Liu¹、G.W. Huang^1,2、Y.C. Lin²、Y.S. Chiu²、E.Y. Chang² (1.National Nano Device Labs.、2.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-10] Investigations on the Dynamic On-Resistance of High Voltage AlGaN/GaN HFETs

J.H. Shin¹、S.Y. Jang¹、T. Jang¹ (1.LG Electronics (Korea))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-11] Wet cleaning process for GaN Surface at room temperature

Y. Tsuji^1,2、T. Katsuyama¹、A. Teramoto²、Y. Shirai²、S. Sugawa²、T. Ohmi² (1.Sumitomo Electric Industries, Ltd.、2.Tohoku Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-12] Analyses of Chemical States at SiN_x/GaN Interface by HAXPES

Y. Saito¹、T. Yonemura¹、J. Iihara¹、S. Uemura¹、Y. Tateno¹、T. Kouchi¹、T. Araya²、S. Kurachi²、T. Komatani²、J. Wada² (1.Sumitomo Electric Industries, Ltd.、2.Sumitomo Electric Device Innovations, Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-13] Investigation of Temperature Dependence of DIBL for InGaAs Multi-Gate n-MOSFETs Considering Quantum Confinement

S.H. Wu¹、Y.S. Wu¹、P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-14] Performance scalability studies by TCAD simulation of raised source/drain versus implanted source/drain plasma-PH₃ passivated In_0.53Ga_0.47As MOSFET

A.B.S. Sumarlina^1,2、G. Samudra¹ (1.National Univ. of Singapore、2.GLOBALFOUNDRIES (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF ダウンロード

617件中(431 - 440)

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