[G-4-2] Novel Sensor Circuits Design Using Multi-physics Simulation for CMOS-MEMS Technology

T. Konishi¹, D. Yamane², T. Matsushima¹, S. Maruyama³, K. Kagaya², H. Ito², N. Ishihara², H. Toshiyoshi³, K. Machida^1,2, K. Masu² (1.NTT Advanced Tech. Corp., 2.Tokyo Tech., 3.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[G-4-3] Amperometric Electrochemical Sensor Array for On-Chip Simultaneous Imaging

T. Kuno¹, K. Niitsu¹, K. Nakazato¹ (1.Univ. of Nagoya (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[G-4-4] A CMOS Image Sensor Having Stacked Photodiodes for Lensless Observation System of Digital Enzyme-linked Immunosorbent Assay (ELISA)

H. Takehara¹, K. Miyazawa¹, T. Noda^1,3, K. Sasagawa^1,3, T. Tokuda^1,3, S.H. Kim^2,3, R. Iino^2,3, H. Noji^2,3, J. Ohta^1,3 (1.Nara Inst. of Sci. and Tech., 2.Univ. of Tokyo, 3.JST-CREST (Japan))

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[G-6-1] BEOL-Transistor Technology with InGaZnO channel for High/Low Voltage Bridging I/Os

K. Kaneko¹, N. Inoue¹, H. Sunamura¹, S. Saito¹, N. Furutake¹, M. Narihiro¹, J. Kawahara¹, M. Hane¹, Y. Hayashi¹ (1.Renesas Electronics Corp. (Japan))

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[G-6-2] Impact of Plasma Nitridation on Reliability Performance of MIM Capacitors Based on ZrLaO_x/ZrTiO_x/ZrLaO_x Laminate Insulator

C.C. Lin¹, R.S. Jiang¹, Y.B. Lin¹, M.T. Yu¹, C.E. Sun¹, Y.H. Wu¹ (1.National Tsing Hua Univ. (Taiwan))

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[G-6-3] Polarity Dependence on Electrical Properties of Low-k Dielectric in Copper Interconnect Structures

M. Lin¹, J. Liang¹, A. Juan¹, K.C. Su¹ (1.United Microelectronics Corp. (Taiwan))

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[G-6-4] Ultra Low-k Non-Porous SiOCH Film (k < 2.2) Formed by Ultra Precise Molecular Control in Polymerization Synthesis by Using Large-Radius Neutral- Beam-Enhanced CVD

Y. Kikuchi^1,3, S. Samukawa^1,2 (1.Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.Tokyo Electron Limited (Japan))

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[G-6-5] Low-k Mesoporous Pure Silica Zeolite Synthesis with Centrifugation Process of Zeolite Precursor

T. Sato¹, S. Kuroki¹, Y. Kayaba², T. Kikkawa¹ (1.Hiroshima Univ., 2.Mitsui Chemicals, Inc. (Japan))

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[G-7-1] 3D Heterogeneous Integration for Nanosensor Systems – the EU-Project e-BRAINS

M. Fernández–Bolaños¹, P. Ramm², R. Pufall³, E. Buitrago¹, C. Zilch⁴, H. Guerin¹, H. Le Poche⁵, R. Pohle⁶, A. Popescu⁶, A.M. Ionescu¹ (1.École Polytechnique Fédérale de Lausanne (EPFL), 2.Fraunhofer Research Institution for Modular Solid State Technologies EMFT, 3.Infineon Technologies AG, 4.Magna Diagnostics GmbH, 5.LITEN⁄DTNM⁄LCH, Commissariat à l'énergie atomique et aux énergies alternatives, 6.SIEMENS AG Corporate Research Munich (Switzerland))

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[G-7-2] Local Bending Stress Reduction with Room-Temperature Curing Adhesive for Decrease in Keep-out-Zone (KOZ) of 3D IC

H. Kino¹, T. Fukushima¹, K.W. Lee¹, M. Koyanagi¹, T. Tanaka¹ (1.Tohoku Univ. (Japan))

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