[A-2-2] Dual-Mode Bipolar Resistance Switching in the HfO₂ RRAM Device

H.Z. Zhang¹、K.S. Yew¹、D.S. Ang¹、C.J. Gu¹、X.P. Wang² (1.Nanyang Tech. Univ.、2.Inst. of Microelectronics, A*STAR (Singapore))

https://doi.org/10.7567/SSDM.2014.A-2-2