[A-3-4] 2T1C Gain Cell Memory with Improved Retention Characteristic By Dual Coupling Method for SOC application Using 45nm-logic compatible CMOS Process

C.J. Lee¹、Y.K. Lee¹、M.K. Park¹、S.W. Kim¹、D.H. Lee¹ (1.Samsung Electronics Corp. (Korea))

https://doi.org/10.7567/SSDM.2014.A-3-4