[A-4-1] 10⁸ Endurance Nonvolatile Memory Transistor with 100 nm Metal Gate

L.V. Hai¹、M. Takahashi¹、W. Zhang¹、S. Sakai¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2014.A-4-1