[A-4-2] Effect of Oxygen Partial Pressure Under Heat Treatment on Ferroelectricity of (Hf_0.5Zr_0.5)O₂ Thin Films

H. Funakubo^1,2, T. Shimizu², T. Yokouchi¹, T. Oikawa¹, T. Shiraishi¹, T. Kiguchi³, A. Akama³, T.J. Konno³, H. Uchida⁴, D. Kim⁵, A. Gruverman⁵ (1.Department of Innovative and Engineered Material, Tokyo Tech, 2.Materials Reserch Center for Element Strategy, Tokyo Tech, 3.Institute for Materials Research, Tohoku Univ., 4.Department of Materials and Life Sciences, Sophia Univ., 5.Department of Physics and Astronomy, Univ. of Nebraska, Lincoln (Japan))

https://doi.org/10.7567/SSDM.2014.A-4-2