[B-1-2] Impact of Post-Growth Annealing for Thin-Film Ge Photodiodes on Si

S. Nagatomo¹、Y. Kawamata¹、Y. Izawa²、S. Hoshino³、Y. Ishikawa¹ (1.Univ. of Tokyo、2.Tokyo Electron Miyagi Ltd.、3.Tokyo Electron Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.B-1-2