MOS Capacitor Type Si Optical Modulator Integrated with Ge Photodetector and its High Speed Operation with CMOS Driver

J. Fujikata; S. Takahashi; M. Takahashi; M. Noguchi; H. Noguchi; T. Horikawa; T. Nakamura; Y. Arakawa

doi:https://doi.org/10.7567/SSDM.2014.B-6-2

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[B-6-2] MOS Capacitor Type Si Optical Modulator Integrated with Ge Photodetector and its High Speed Operation with CMOS Driver

J. Fujikata¹, S. Takahashi¹, M. Takahashi², M. Noguchi¹, H. Noguchi³, T. Horikawa², T. Nakamura¹, Y. Arakawa⁴ (1.PETRA, 2.AIST, 3.NEC Corp., 4.Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2014.B-6-2

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