Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology

P. Aseev; P.S. Rodriguez; V.J. Gomez; P. Kumar; N.H. Alvi; J.M. Mánuel; F.M. Morales; J.J. Jiménez; R. García; E. Calleya; R. Nötzel

doi:https://doi.org/10.7567/SSDM.2014.C-3-1

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-3-1] Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology

P. Aseev¹, P.S. Rodriguez¹, V.J. Gomez¹, P. Kumar¹, N.H. Alvi¹, J.M. Mánuel², F.M. Morales², J.J. Jiménez², R. García², E. Calleya¹, R. Nötzel¹ (1.Univ. Politécnica de Madrid, 2.Univ. de Cádiz (Spain))

https://doi.org/10.7567/SSDM.2014.C-3-1

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