[C-3-2] Selective Area Growth of N-face GaN (000-1) Films by Group-III-Source Flow-Rate Modulation Epitaxy

T. Akasaka¹、C.H. Lin¹、H. Yamamoto¹ (1.NTT BRL (Japan))

https://doi.org/10.7567/SSDM.2014.C-3-2