Growth of Two Inch Si<sub>0.5</sub>Ge<sub>0.5</sub> Bulk Single Crystals

K. Kinoshita; Y. Arai; O. Nakatsuka; K. Taguchi; H. Tomioka; R. Tanaka; S. Yoda

doi:https://doi.org/10.7567/SSDM.2014.C-8-1

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-8-1] Growth of Two Inch Si_0.5Ge_0.5 Bulk Single Crystals

K. Kinoshita¹、Y. Arai¹、O. Nakatsuka²、K. Taguchi³、H. Tomioka³、R. Tanaka³、S. Yoda¹ (1.Japan Aerospace Exploration Agency、2.Nagoya Univ.、3.Advanced Engineering Services Co. Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.C-8-1

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2014 International Conference on Solid State Devices and Materials

[C-8-1] Growth of Two Inch Si0.5Ge0.5 Bulk Single Crystals

[C-8-1] Growth of Two Inch Si_0.5Ge_0.5 Bulk Single Crystals