pH and pK Sensing Modification by Cosputtered TiSiON/SiO<sub>2</sub>/Si Electrolyte-Insulator-Semiconductor Structure

C.Y. Hsu; T.C. Chen; H. Yang; H.C. Wang; W.T. Lin; P.C. Juan; C.M. Yang; C.S. Lai

doi:https://doi.org/10.7567/SSDM.2014.D-1-3

[D-1-3] pH and pK Sensing Modification by Cosputtered TiSiON/SiO₂/Si Electrolyte-Insulator-Semiconductor Structure

C.Y. Hsu¹, T.C. Chen¹, H. Yang¹, H.C. Wang¹, W.T. Lin¹, P.C. Juan², C.M. Yang^1,3,4,5, C.S. Lai^1,4,5 (1.Department of Electronic Eng, Chang Gung Univ, 2.Department of Materials Eng and Center for Thin Film Technologies and Applications, Ming Chi Univ, 3.Institute of Electro-Optical Eng, Chang Gung Univ, 4.Healthy Aging Research Center, Chang Gung Univ, 5.Center for Biomedical Eng, Chang Gung Univ (Taiwan))

https://doi.org/10.7567/SSDM.2014.D-1-3

2014 International Conference on Solid State Devices and Materials

[D-1-3] pH and pK Sensing Modification by Cosputtered TiSiON/SiO2/Si Electrolyte-Insulator-Semiconductor Structure

[D-1-3] pH and pK Sensing Modification by Cosputtered TiSiON/SiO₂/Si Electrolyte-Insulator-Semiconductor Structure