pH and pK Sensing Modification by Cosputtered TiSiON/SiO<sub>2</sub>/Si Electrolyte-Insulator-Semiconductor Structure

C.Y. Hsu; T.C. Chen; H. Yang; H.C. Wang; W.T. Lin; P.C. Juan; C.M. Yang; C.S. Lai

doi:https://doi.org/10.7567/SSDM.2014.D-1-3

[D-1-3] pH and pK Sensing Modification by Cosputtered TiSiON/SiO₂/Si Electrolyte-Insulator-Semiconductor Structure

C.Y. Hsu¹、T.C. Chen¹、H. Yang¹、H.C. Wang¹、W.T. Lin¹、P.C. Juan²、C.M. Yang^1,3,4,5、C.S. Lai^1,4,5 (1.Department of Electronic Eng, Chang Gung Univ、2.Department of Materials Eng and Center for Thin Film Technologies and Applications, Ming Chi Univ、3.Institute of Electro-Optical Eng, Chang Gung Univ、4.Healthy Aging Research Center, Chang Gung Univ、5.Center for Biomedical Eng, Chang Gung Univ (Taiwan))

https://doi.org/10.7567/SSDM.2014.D-1-3

2014 International Conference on Solid State Devices and Materials

[D-1-3] pH and pK Sensing Modification by Cosputtered TiSiON/SiO2/Si Electrolyte-Insulator-Semiconductor Structure

[D-1-3] pH and pK Sensing Modification by Cosputtered TiSiON/SiO₂/Si Electrolyte-Insulator-Semiconductor Structure