[E-1-4] Temperature Dependence of TiN-Anode GaN Schottky Barrier Diode Characteristics for Microwave Power Rectification

R. Fujihara¹、Y. Itai¹、L. Li¹、Q. Liu¹、Y. Ohno²、J.P. Ao¹ (1.Univ. of Tokushima、2.e-Device Inc. (Japan))

https://doi.org/10.7567/SSDM.2014.E-1-4