[E-1-4] Temperature Dependence of TiN-Anode GaN Schottky Barrier Diode Characteristics for Microwave Power Rectification

R. Fujihara¹, Y. Itai¹, L. Li¹, Q. Liu¹, Y. Ohno², J.P. Ao¹ (1.Univ. of Tokushima, 2.e-Device Inc. (Japan))

https://doi.org/10.7567/SSDM.2014.E-1-4