[E-1-5] Low-frequency Noise of Intrinsic Gated Region in AlN/AlGaN/GaN Metal-insulator-semiconductor Heterojunction Field-effect Transistors

S.P. Le¹、T.Q. Nguyen¹、H. Shih¹、M. Kudo¹、T. Suzuki¹ (1.JAIST (Japan))

https://doi.org/10.7567/SSDM.2014.E-1-5