F-band Bidirectional Transceiver using 75-nm InP HEMTs

S. Shiba; M. Sato; H. Matsumura; Y. Kawano; T. Suzuki; Y. Nakasha; T. Takahashi; K. Makiyama; T. Iwai; N. Hara

doi:https://doi.org/10.7567/SSDM.2014.E-2-2

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-2-2] F-band Bidirectional Transceiver using 75-nm InP HEMTs

S. Shiba¹, M. Sato¹, H. Matsumura¹, Y. Kawano¹, T. Suzuki¹, Y. Nakasha¹, T. Takahashi¹, K. Makiyama¹, T. Iwai², N. Hara¹ (1.Fujitsu Ltd., 2.Fujitsu Laboratories Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.E-2-2

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