F-band Bidirectional Transceiver using 75-nm InP HEMTs

S. Shiba; M. Sato; H. Matsumura; Y. Kawano; T. Suzuki; Y. Nakasha; T. Takahashi; K. Makiyama; T. Iwai; N. Hara

doi:https://doi.org/10.7567/SSDM.2014.E-2-2

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-2-2] F-band Bidirectional Transceiver using 75-nm InP HEMTs

S. Shiba¹、M. Sato¹、H. Matsumura¹、Y. Kawano¹、T. Suzuki¹、Y. Nakasha¹、T. Takahashi¹、K. Makiyama¹、T. Iwai²、N. Hara¹ (1.Fujitsu Ltd.、2.Fujitsu Laboratories Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.E-2-2

▲