The Japan Society of Applied Physics

[E-2-2] F-band Bidirectional Transceiver using 75-nm InP HEMTs

S. Shiba1, M. Sato1, H. Matsumura1, Y. Kawano1, T. Suzuki1, Y. Nakasha1, T. Takahashi1, K. Makiyama1, T. Iwai2, N. Hara1 (1.Fujitsu Ltd., 2.Fujitsu Laboratories Ltd. (Japan))

https://doi.org/10.7567/SSDM.2014.E-2-2