Non-destructive Mapping of Doping and Structural Composition of High Current Density Resonant Tunnelling Diodes Grown by Metal-Organic Vapour Phase Epitaxy Through Photoluminescence Spectroscopy

K.J.P. Jacobs; B.J. Stevens; T. Mukai; D. Ohnishi; R.A. Hogg

doi:https://doi.org/10.7567/SSDM.2014.E-2-4

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[E-2-4] Non-destructive Mapping of Doping and Structural Composition of High Current Density Resonant Tunnelling Diodes Grown by Metal-Organic Vapour Phase Epitaxy Through Photoluminescence Spectroscopy

K.J.P. Jacobs¹、B.J. Stevens²、T. Mukai³、D. Ohnishi³、R.A. Hogg¹ (1.Univ. of Sheffield、2.EPSRC National Centre for III-V Technologies、3.Rohm Co. Ltd. (UK))

https://doi.org/10.7567/SSDM.2014.E-2-4

▲