[E-3-2] A Novel High-Current Density GaN-based Normally-Off Transistor with Tensile Strained Quaternary InAlGaN Barrier

R. Kajitani¹、K. Tanaka¹、M. Ogawa¹、H. Ishida¹、M. Ishida¹、T. Ueda¹ (1.Panasonic Corp. (Japan))

https://doi.org/10.7567/SSDM.2014.E-3-2