[E-3-4] Normally-off Operation GaN HEMT Devices with Nano-pattern Structure

Y.K. Fu¹、W.H. Kuo¹、S.F. Lin¹、Y.L. Chou¹ (1.Indus. Tech. Res. Inst. (Taiwan))

https://doi.org/10.7567/SSDM.2014.E-3-4