[E-4-3] Temperature Dependence of Current Gain in 4H-SiC Bipolar Junction Transistors

S. Asada¹、T. Okuda¹、T. Kimoto¹、J. Suda¹ (1.Kyoto Univ. (Japan))

https://doi.org/10.7567/SSDM.2014.E-4-3