The Japan Society of Applied Physics

[E-8-2] Hole Mobility Enhancements in Strained InxGa1-xSb Heterostructure PMOSFET

P.Y. Chang1, X.Y. Liu2, L. Zeng2, G. Du2 (1.School of Electronic and Computer Eng., Peking Univ., 2.Inst. of Microelectronics, Peking Univ. (China))

https://doi.org/10.7567/SSDM.2014.E-8-2