[E-8-2] Hole Mobility Enhancements in Strained In_xGa_1-xSb Heterostructure PMOSFET

P.Y. Chang¹、X.Y. Liu²、L. Zeng²、G. Du² (1.School of Electronic and Computer Eng., Peking Univ.、2.Inst. of Microelectronics, Peking Univ. (China))

https://doi.org/10.7567/SSDM.2014.E-8-2