[F-3-2] Development of Ferroelectric Phase in TiN/Hf-Zr-O/TiN Capacitors Prepared by Sputter Deposition and Capped Anneal

S. Migita¹、H. Ota¹、Y. Morita¹、M. Masahara¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2014.F-3-2