SiO<sub>2</sub>-interface Layer Reduction in HfO<sub>2</sub> Gate Stacks through Si-substrate Oxidation

2014 International Conference on Solid State Devices and Materials

Sep 8, 2014 - Sep 11, 2014
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

X. Li¹, T. Yajima¹, T. Nishimura¹, K. Nagashio¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))