SiO<sub>2</sub>-interface Layer Reduction in HfO<sub>2</sub> Gate Stacks through Si-substrate Oxidation

2014 International Conference on Solid State Devices and Materials

2014年9月8日〜 2014年9月11日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

X. Li¹、T. Yajima¹、T. Nishimura¹、K. Nagashio¹、A. Toriumi¹ (1.Univ. of Tokyo (Japan))